A molecular-scale portrait of domain imaging in organic surfaces

被引:13
|
作者
Perez-Rodriguez, Ana [1 ]
Barrena, Esther [1 ]
Fernandez, Anton [1 ]
Gnecco, Enrico [2 ]
Ocal, Carmen [1 ]
机构
[1] CSIC, ICMAB, Inst Ciencia Mat Barcelona, Campus UAB, Bellaterra 08193, Spain
[2] Friedrich Schiller Univ Jena, Otto Schott Inst Mat Res, Lobdergraben 32, D-07743 Jena, Germany
关键词
THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; FRICTION ANISOTROPY; FORCE MICROSCOPY; MONOLAYER; ASYMMETRY; TRANSPORT; SEMICONDUCTORS; ORIENTATION; MORPHOLOGY;
D O I
10.1039/c7nr01116d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Progress in the general understanding of structure-property relationships in organic devices requires experimental tools capable of imaging structural details, such as molecular packing or domain attributes, on ultra-thin films. An operation mode of scanning force microscopy, related to friction force microscopy (FFM) and known as transverse shear microscopy (TSM), has demonstrated the ability to reveal the orientation of crystalline domains in organic surfaces with nanometer resolution. In spite of these promising results, numerous questions remain about the physical origin of the TSM domain imaging mechanism. Taking as a benchmark a PTCDI-C8 sub-monolayer, we demonstrate experimentally and theoretically that such a mechanism is the same atomic scale stick-slip ruling FFM leading to the angular dependence of both signals. Lattice-resolved images acquired on top of differently oriented PTCDI-C8 molecular domains are crucial to permit azimuthal sampling, without the need for sample rotation. The simulations reveal that, though the surface crystallography is the direct cause of the FFM and TSM signals, the manifestation of anisotropy will largely depend on the amplitude of the surface potential corrugation as well as on the temperature. This work provides a novel nanoscale strategy for the quantitative analysis of organic thin films based on their nanotribological response.
引用
收藏
页码:5589 / 5596
页数:8
相关论文
共 50 条
  • [21] Prospects for Molecular-Scale Electronics
    Mark A. Reed
    MRS Bulletin, 2001, 26 : 113 - 114
  • [22] Molecular-scale wear and tear
    Jacoby, M
    CHEMICAL & ENGINEERING NEWS, 2005, 83 (43) : 51 - +
  • [23] Toward Molecular-Scale MRI
    Hemmer, Philip
    SCIENCE, 2013, 339 (6119) : 529 - 530
  • [24] TRIBOLOGY - MOLECULAR-SCALE LUBRICATION
    CUSHMAN, JH
    NATURE, 1990, 347 (6290) : 227 - 228
  • [25] Molecular-scale transistors.
    Schön, H
    Bao, Z
    Meng, H
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2002, 223 : C42 - C42
  • [26] Molecular-scale Tailoring of Graphene Surface Chemistry via Organic Functionalization
    Wang, Q. H.
    Hossain, Md Z.
    Walsh, M. A.
    Hersam, M. C.
    DIELECTRICS IN NANOSYSTEMS -AND- GRAPHENE, GE/III-V, NANOWIRES AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS 3, 2011, 35 (03): : 201 - 203
  • [27] Prospects for molecular-scale electronics
    Reed, MA
    MRS BULLETIN, 2001, 26 (02) : 113 - 120
  • [28] Molecular-scale wear and tear
    Jacoby, Mitch
    Chemical and Engineering News, 2003, 81 (15): : 37 - 40
  • [29] Molecular-scale metal wires
    Natelson, D
    Willett, RL
    West, KW
    Peiffer, LN
    SOLID STATE COMMUNICATIONS, 2000, 115 (05) : 269 - 274
  • [30] True molecular-scale imaging in atomic force microscopy: Experiment and modeling
    Belikov, S
    Magonov, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (3B): : 2158 - 2165