Soft nitridation of GaAs(100) by hydrazine sulfide solutions: Effect on surface recombination and surface barrier

被引：26
|
作者：
Berkovits, V. L.
Paget, D.
Karpenko, A. N.
Ulin, V. P.
Tereshchenko, O. E.
机构：
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] Ecole Polytech, Lab Phys Matiere Condensee, F-91128 Palaiseau, France
[3] Novosibirsk State Univ, Inst Semicond Phys, Novosibirsk 630090, Russia
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 02期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1063/1.2402233
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of nitridation of GaAs(100) by hydrazine sulfide solutions on the surface recombination velocity and surface barrier has been studied using photoluminescence and photoreflectance spectroscopies. Nitridation produces a decrease of surface recombination velocity by a factor of 26. After three years of air exposure, the recombination velocity is still smaller than for the naturally oxidized surface by a factor of 11. The observed effect is caused by a continuous nitride monolayer bonded with the GaAs substrate. The surface Fermi level is still pinned near midgap, which is attributed to residual unpassivated surface defects.
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页数：3
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