Enhanced Thermoelectric Properties of p-Type Bi0.48Sb1.52Te3/Sb2Te3 Composite

被引:18
|
作者
Shi, Fanfan [1 ,2 ]
Tan, Chang [1 ]
Wang, Hongxiang [1 ,3 ]
Tan, Xiaojian [1 ,3 ]
Yin, Yinong [1 ]
Yu, Bo [1 ]
Cai, Jianfeng [1 ]
Xiong, Chenglong [1 ,3 ]
Liu, Guoqiang [1 ,3 ]
Jiang, Jun [1 ,3 ]
机构
[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
[2] Univ Sci & Technol China, Nano Sci & Technol Inst, Suzhou 215123, Peoples R China
[3] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
基金
中国国家自然科学基金;
关键词
bismuth telluride; thermoelectric; hydrothermal method; coherent interface; potential barrier;
D O I
10.1021/acsami.0c15991
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Constructing a nanocomposite to introduce a coherent interface is an effective way to improve the property of thermoelectric material. Here, a series composites of Bi0.48Sb1.52Te3-x wt % Sb2Te3 (x = 0, 0.3, 0.5, 0.8, and 1.0) were synthesized, where the hydrothermally prepared Sb2Te3 nanosheets were intimately wrapped in the solid-state-reacted Bi0.48Sb1.52Te3 matrix. The formation of a coherent interface was observed and confirmed by the scanning electron microscopy characterization. As the Sb2Te3 content was over 0.5 wt %, the carrier mobility could increase by 26%, while the carrier concentration decreased by 9% compared to those of the pure matrix at 300 K, enhancing the power factor to 40.1 mu W/cm K-2. Moreover, the Bi0.48Sb1.52Te3-0.5 wt % Sb2Te3 sample exhibited a reduced lattice thermal conductivity of 0.83 W/m K at room temperature, resulting from the strengthened phonon scattering by interfaces. Combined with the manipulations of both the electronic and thermal transport by constructing a coherent interface, a maximum ZT of 1.05 was obtained in the x = 0.5 composite at 300 K, and it was improved by 20% compared with the result of the Bi0.48Sb1.52Te3 matrix.
引用
收藏
页码:52922 / 52928
页数:7
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