Improved Rear-Side Passivation by Atomic Layer Deposition Al2O3/SiNx Stack Layers for High VOC Industrial p-Type Silicon Solar Cells

被引：3
|
作者：
Lin, Je-Wei [1 ]
Chen, Yi-Yang [2 ]
Gan, Jon-Yiew [2 ]
Hseih, Wei-Ping [1 ]
Du, Chen-Hsu [3 ]
Chao, Tien-Sheng [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan
[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan
[3] Ind Technol Res Inst, Green Energy & Environm Res Labs, Hsinchu 31040, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 09期
关键词：
Al2O3/SiNx stack layers; negative fixed charge; open-circuit voltage; surface passivation;
D O I：
10.1109/LED.2013.2271894
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This research develops high open-circuit voltage (V-OC) p-type industrial screen-printed silicon solar cells using improved rear surface passivation. It shows a significant improvement in the minority carrier lifetime by low temperature (<450 degrees C) thermal atomic layer deposition of Al2O3 layers and plasma-enhanced chemical vapor deposition of SiNx passivation layers. An increase in the V-OC and the short-circuit current (J(SC)) due to an improved long-wavelength response are also demonstrated. With the optimized stack layers, a high efficiency of 19.2% across a large area (156 cm(2)) is seen. Furthermore, the rear-side passivation scheme can be easily integrated into the conventional screen-printed process. This is very promising for in-line solar cell manufacturing.
引用
收藏
页码：1163 / 1165
页数：3
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