Neuromorphic Computing Based on Resistive RAM

被引:5
|
作者
Chen, Zixuan [1 ]
Wu, Huaqiang [1 ]
Gao, Bin [1 ]
Yao, Peng [1 ]
Li, Xinyi [1 ]
Qian, He [1 ]
机构
[1] Tsinghua Univ, Inst Microelect, Beijing, Peoples R China
关键词
Resistive RAM; Neuromorphic Computing; Array; Full Chip; NETWORK; STORAGE;
D O I
10.1145/3060403.3066873
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Resistive random access memory (RRAM) has gained significant attentions because of its excellent characteristics which are suitable for next-generation non-volatile memory applications. It is also very attractive to build neuromorphic computing chip based on RRAM cells due to non-volatile and analog properties. Neuromorphic computing hardware technologies using analog weight storage allow the scaling-up of the system size to complete cognitive tasks such as face classification much faster while consuming much lower energy. In this paper, RRAM technology development from material selection to device structure, from small array to full chip will be discussed in detail. Neuromorphic computing using RRAM devices is demonstrated, and speed & energy consumption are compared with Xeon Phi processor.
引用
收藏
页码:311 / 315
页数:5
相关论文
共 50 条
  • [21] Multistate Register Based on Resistive RAM
    Patel, Ravi
    Kvatinsky, Shahar
    Friedman, Eby G.
    Kolodny, Avinoam
    IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2015, 23 (09) : 1750 - 1759
  • [22] Spin based neuromorphic computing
    Bindal, Namita
    Kulkarni, Anant
    Gyanendra
    Kaushik, Brajesh Kumar
    SPINTRONICS XII, 2019, 11090
  • [23] VCSEL Based Neuromorphic Computing
    Newns, Dafydd Owen
    Hejda, Matej
    Robertson, Joshua
    Hurtado, Antonio
    2023 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION, OFC, 2023,
  • [24] Doping induced enhancement of resistive switching responses in ZnO for neuromorphic computing
    Rahman, Naveed Ur
    Mahmood, Muhammad Adil
    Rahman, Nasir
    Sohail, Mohammad
    Iqbal, Shahid
    Soliyeva, Mukhlisa
    Al-Asbahi, Bandar Ali
    Khan, Rajwali
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2024, 35 (09)
  • [25] Advancement in Soft Iontronic Resistive Memory Devices and Their Application for Neuromorphic Computing
    Khan, Muhammad Umair
    Kim, Jungmin
    Chougale, Mahesh Y. Y.
    Shaukat, Rayyan Ali
    Saqib, Qazi Muhammad
    Patil, Swapnil R. R.
    Mohammad, Baker
    Bae, Jinho
    ADVANCED INTELLIGENT SYSTEMS, 2023, 5 (02)
  • [26] Strategy for the Integrated Design of Ferroelectric and Resistive Memristors for Neuromorphic Computing Applications
    Lee, Jung-Kyu
    Park, Yongjin
    Seo, Euncho
    Park, Woohyun
    Youn, Chaewon
    Lee, Sejoon
    Kim, Sungjun
    ACS APPLIED ELECTRONIC MATERIALS, 2025, 7 (07) : 3055 - 3066
  • [27] Doping induced enhancement of resistive switching responses in ZnO for neuromorphic computing
    Naveed Ur Rahman
    Muhammad Adil Mahmood
    Nasir Rahman
    Mohammad Sohail
    Shahid Iqbal
    Mukhlisa Soliyeva
    Bandar Ali Al-Asbahi
    Rajwali Khan
    Journal of Materials Science: Materials in Electronics, 2024, 35
  • [28] Controllable resistive switching of STO:Ag/SiO2-based memristor synapse for neuromorphic computing
    Nasir Ilyas
    Jingyong Wang
    Chunmei Li
    Hao Fu
    Dongyang Li
    Xiangdong Jiang
    Deen Gu
    Yadong Jiang
    Wei Li
    Journal of Materials Science & Technology, 2022, 97 (02) : 254 - 263
  • [29] Reliable Resistive Switching and Multifunctional Synaptic Behavior in ZnO/NiO Nanocomposite Based Memristors for Neuromorphic Computing
    Khan, Rajwali
    Raziq, Fazal
    Ahmad, Iftikhar
    Ghosh, Siddhartha
    Kheawhom, Soorathep
    Sangaraju, Sambasivam
    ACS APPLIED ELECTRONIC MATERIALS, 2024, 7 (01) : 73 - 85
  • [30] Resistive switching and synaptic characteristics in ZnO@β-SiC composite-based RRAM for neuromorphic computing
    Santra, Bisweswar
    Das, Gangadhar
    Aquilanti, Giuliana
    Kanjilal, Aloke
    JOURNAL OF APPLIED PHYSICS, 2025, 137 (04)