Copper wafer bonding

被引：173
|
作者：
Fan, A [1 ]
Rahman, A [1 ]
Reif, R [1 ]
机构：
[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 1999年 / 2卷 / 10期
关键词：
D O I：
10.1149/1.1390894
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Silicon wafers, coated with 300 nm evaporated copper, were successfully bonded at 450 degrees C for 30 min with a postbonding anneal in N-2 for 30 min. The postbonding anneal was required for successful bonding, but the annealing temperature did not influence the bond strength from 400 to 620 degrees C. The inclusion of a tantalum diffusion barrier for Cu did not affect the bonding strength or the bonding temperature. (C) 1999 The Electrochemical Society. S1099-0062(99)02-010-6. All rights reserved.
引用
收藏
页码：534 / 536
页数：3
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