Copper wafer bonding

被引：173
|
作者：
Fan, A [1 ]
Rahman, A [1 ]
Reif, R [1 ]
机构：
[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 1999年 / 2卷 / 10期
关键词：
D O I：
10.1149/1.1390894
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Silicon wafers, coated with 300 nm evaporated copper, were successfully bonded at 450 degrees C for 30 min with a postbonding anneal in N-2 for 30 min. The postbonding anneal was required for successful bonding, but the annealing temperature did not influence the bond strength from 400 to 620 degrees C. The inclusion of a tantalum diffusion barrier for Cu did not affect the bonding strength or the bonding temperature. (C) 1999 The Electrochemical Society. S1099-0062(99)02-010-6. All rights reserved.
引用
收藏
页码：534 / 536
页数：3
相关论文
共 50 条
  • [1] Bonding parameters of blanket copper wafer bonding
    K. N. Chen
    A. Fan
    C. S. Tan
    R. Reif
    Journal of Electronic Materials, 2006, 35 : 230 - 234
  • [2] Bonding parameters of blanket copper wafer bonding
    Chen, KN
    Fan, A
    Tan, CS
    Reif, R
    JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (02) : 230 - 234
  • [3] Microstructure examination of copper wafer bonding
    Chen, KN
    Fan, A
    Reif, R
    JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (04) : 331 - 335
  • [4] Microstructure examination of copper wafer bonding
    Kuan-Neng Chen
    Andy Fan
    Rafael Reif
    Journal of Electronic Materials, 2001, 30 : 331 - 335
  • [5] Physical mechanisms of copper-copper wafer bonding
    Rebhan, B.
    Hingerl, K.
    JOURNAL OF APPLIED PHYSICS, 2015, 118 (13)
  • [6] Nanotwinned Copper Hybrid Bonding and Wafer-On-Wafer Integration
    Chiu, Wei-Lan
    Chou, Kai-Wei
    Chang, Hsiang-Hung
    2020 IEEE 70TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2020), 2020, : 210 - 215
  • [7] Morphology and bond strength of copper wafer bonding
    Chen, KN
    Tan, CS
    Fan, A
    Reif, R
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (01) : G14 - G16
  • [8] Low Temperature Wafer-To-Wafer Hybrid Bonding by Nanotwinned Copper
    Chiu, Wei-Lan
    Lee, Ou-Hsiang
    Chiang, Chia-Wen
    Chang, Hsiang-Hung
    IEEE 71ST ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2021), 2021, : 365 - 370
  • [9] Impact of Dielectric and Copper Via Design on Wafer-to-Wafer Hybrid Bonding
    Dubey, Vikas
    Wuensch, Dirk
    Gottfried, Knut
    Wiemer, Maik
    Fischer, Tobias
    Schermer, Sebastian
    Dittmar, Nils
    Helke, Christian
    Haase, Micha
    Ghosal, Sanghamitra
    Hanisch, Anke
    Bonitz, Jens
    Luo-Hofmann, Jinji
    Hofmann, Lutz
    Lykova, Maria
    Stoll, Fiete
    Vogel, Klaus
    Schulz, Stefan E.
    2023 IEEE 73RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC, 2023, : 795 - 799
  • [10] Low-Temperature Wafer-to-Wafer Hybrid Bonding by Nanocrystalline Copper
    Chiu, Wei-Lan
    Lee, Ou-Hsiang
    Chiang, Chia-Wen
    Chang, Hsiang-Hung
    IEEE 72ND ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2022), 2022, : 679 - 684
12345