Memristors Based on Nanoscale Layers LiNbO3and (Co40Fe40B20)x(LiNbO3)100- x

被引：6

作者：

Nikiruy, K. E. ^{[1
]}

Iliasov, A. I. ^{[1
,2
]}

Emelyanov, A., V ^{[1
,3
]}

Sitnikov, A., V ^{[1
]}

Rylkov, V. V. ^{[1
,4
]}

Demin, V. A. ^{[1
]}

机构：

[1] Natl Res Ctr, Kurchatov Inst, Moscow, Russia

[2] Moscow MV Lomonosov State Univ, Moscow, Russia

[3] Moscow Inst Phys & Technol, Dolgoprudnyi, Russia

[4] Russian Acad Sci, Fryazin Branch, Kotelnikov Inst Radio Engn & Elect, Fryazino, Russia

来源：

PHYSICS OF THE SOLID STATE | 2020年 / 62卷 / 09期

基金：

俄罗斯科学基金会;

关键词：

memristor; resistive switching effect; metal-oxide nanocomposite;

D O I：

10.1134/S1063783420090218

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The memristive properties of layered capacitor structures based on a (Co40Fe40B20)(x)(LiNbO3)(100 -) (x)nanocomposite and LiNbO(3)with thicknesses of 10 and 40 nm, respectively, are studied. There was a sharp transition from a single-filament to multi-filament resistive switching mechanism observed for the first time which appeared with an increase in an amount of the metal phase in the nanocomposite; this mechanism is explained within a model proposed previously.

引用

页码：1732 / 1735

页数：4

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