Anisotropy of Elastic Properties and Dynamics of ZnAs2 Crystal Lattice

被引：0

作者：

Raranckee, M. D. ^{[1
]}

Balazyuk, V. H. ^{[1
]}

Melnik, M. G. ^{[1
]}

Khiginitska, O. M. ^{[1
]}

Kovalyuk, Z. D. ^{[2
]}

机构：

[1] Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine

[2] Chernivtsi Natl Univ, Natl Acad Sci, Dept Problems Mat, Chernovtsy, Ukraine

来源：

METALLOFIZIKA I NOVEISHIE TEKHNOLOGII | 2012年 / 34卷 / 09期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

For ZnAs2 single crystals (monoclinic syngony), x-ray diffraction method is used to investigate the temperature dependences of thermal expansion coefficients, alpha(ij)(T), mean square displacement of atoms, (U) over bar (2), and characteristic De-bye temperatures, OD. Ultrasonic pulse method is used to determine the velocities of elastic-waves' propagation, nu(i)(T) (i = 1, ..., 18), elastic moduli, C-ij(T), and other parameters of zinc diarsenide crystal-lattice dynamics. Anisotropic elasticity, crystal-lattice stability, and chemical-bond character are analysed.

引用

页码：1293 / 1306

页数：14

共 50 条

[31] Polarization photosensitivity of Schottky barriers on monoclinic ZnAs2 crystals
Yu. A. Nikolaev
V. Yu. Rud’
Yu. V. Rud’
E. I. Terukov
Technical Physics, 2009, 54 : 1597 - 1601
[32] Energy band structure and optical constants of ZnAs2 crystals
Stamov, I. G.
Syrbu, N. N.
Ursaki, V. V.
Dorogan, A. V.
OPTICS COMMUNICATIONS, 2012, 285 (13-14) : 3104 - 3110
[33] Growth of ZnAs2 Single Crystals by Directional Solidification in a Bridgman Geometry
Inorg Mater, 4 (330):
[34] ZN DIFFUSION IN INXGA1-XAS WITH ZNAS2 SOURCE
YAMAMOTO, Y
KANBE, H
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) : 121 - 128
[35] Growth of ZnAs2 single crystals by directional solidification in a Bridgman geometry
Marenkin, SF
Maimasov, AB
Popov, VA
INORGANIC MATERIALS, 1997, 33 (04) : 330 - 334
[36] Surface characterization of the photorefractive crystals CdAs2 and ZnAs2 using electroreflectance
Matveeva, LA
Matiyuk, IM
EIGHTH INTERNATIONAL CONFERENCE ON NONLINEAR OPTICS OF LIQUID AND PHOTOREFRACTIVE CRYSTALS, 2001, 4418 : 230 - 233
[37] Phase transitions of p-type ZnAs2 at very high pressures
A. Yu. Mollaev
R. K. Arslanov
L. A. Saipulaeva
A. N. Babushkin
S. V. Tatur
S. F. Marenkin
A. Yu. Vol’fkovich
Inorganic Materials, 2005, 41 : 95 - 97
[38] Comparative study of Er-implanted Si, ZnAs2 and CuInSe2
Yakushev, M
Mudryi, A
Martin, RW
Feofanov, Y
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 105 (1-3): : 175 - 178
[39] LAMBDA-MODULATED PHOTOEMISSION OF SEMICONDUCTORS ZNAS2 AND CDP4
KUDINTSEVA, GA
KAMERTSEL, AM
RADAUTSAN, SI
STAMOV, IG
SYRBU, NN
DOKLADY AKADEMII NAUK SSSR, 1978, 241 (05): : 1073 - 1075
[40] Phase transitions of p-type ZnAs2 at very high pressures
Mollaev, AY
Arslanov, RK
Saipulaeva, LA
Babushkin, AN
Tatur, SV
Marenkin, SF
Vol'fkovich, AY
INORGANIC MATERIALS, 2005, 41 (02) : 95 - 97

← 1 2 3 4 5 →