Nanocrystalline Silicon Oxide Stacks for Silicon Heterojunction Solar Cells for Hot Climates

被引：7

作者：

Haschke, Jan ^{[1
]}

Monnard, Raphael ^{[1
]}

Antognini, Luca ^{[1
]}

Cattin, Jean ^{[1
]}

Abdallah, Amir A. ^{[2
]}

Aissa, Brahim ^{[2
]}

Kivambe, Maulid M. ^{[2
]}

Tabet, Nouar ^{[2
]}

Boccard, Mathieu ^{[1
]}

Ballif, Christophe ^{[1
,3
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Microengn IMT, Photovolta & Thin Film Elect Lab PV Lab, Rue Maladiere 71B, CH-2002 Neuchatel, Switzerland

[2] HBKU, Qatar Fdn, QEERI, POB 5825, Doha, Qatar

[3] Swiss Ctr Elect & Microtechnol CSEM, PV Ctr, Rue Jaquet Droz 1, CH-2002 Neuchatel, Switzerland

来源：

SILICONPV 2018: THE 8TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS | 2018年 / 1999卷

基金：

瑞士国家科学基金会;

关键词：

D O I：

10.1063/1.5049262

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Today, solar cells are generally optimized for 25 degrees C, whereas in most climates, especially hot and sunny ones, the operating device temperature is usually much higher, e.g. in the range of 60 degrees C. We investigate the use of n-doped nanocrystalline silicon oxide layers (nc-SiOx:H(n)) as front contact stacks in silicon heterojunction solar cells and compare them with oxide-free front contacts. Whereas a short-circuit current density of 41 mAcm(-2) could be obtained due to the increased transparency of the nc-SiOx:H(n) layers, the fill-factor is drastically reduced and leads to a reduced efficiency at 25 degrees C. Albeit the FF can be partly recovered at 60 degrees C, the highest efficiencies at 60 degrees C were so far obtained for the solar cells with oxide-free front contact stacks.

引用

页数：6

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