Surface morphology of GaN layer grown by plasma-assisted molecular beam epitaxy on MOCVD-grown GaN template

被引：3

作者：

Ide, T ^{[1
]}

Shimizu, M ^{[1
]}

Kuo, J ^{[1
]}

Jeganathan, K ^{[1
]}

Shen, XQ ^{[1
]}

Okumura, H ^{[1
]}

机构：

[1] Adv Ind Sci & Technol, Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303343

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We performed the epitaxial growth of the GaN layer on MOCVD-grown GaN templates by plasma-assisted MBE (rf-MBE). We investigated the surface morphology and the growth-mode mechanism, varying the growth condition such as the growth rate and the growth temperature. By reducing the growth rate from 0.5 mum/h to 0.2 mum/h, smooth and flat surface was achieved. The rms surface roughness of 0.2-mum/h-GaN films was smaller than that of MOCVD templates. The cause of smooth surface morphology was the restriction of the spiral growth. Moreover, by changing Ga-flux at 0.2-mum/h growth condition, we found that it was important for smooth surface morphology to grow in stoichiometric condition as well as low growth rate. (C) 2003 WILEY-VCH Verlag GmbH & Co, KGaA, Weinheim.

引用

页码：2549 / 2552

页数：4

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