Synthesis of single-phase stoichiometric InTe thin films for opto-electronic applications

被引：4
|
作者：
Sowjanya, Vallem [1 ]
Bangera, Kasturi V. [1 ]
Shivakumar, G. K. [2 ]
机构：
[1] Natl Inst Technol, Dept Phys, Surathkal 575025, Karnataka, India
[2] NMAM Inst Technol, Dept Phys, Nitte 574110, Karnataka, India
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2019年 / 129卷
关键词：
Semiconductors; Structural; Electrical properties; Absorption coefficient; THERMOELECTRIC PROPERTIES; OPTICAL-PROPERTIES; GROWTH;
D O I：
10.1016/j.spmi.2019.03.007
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Mono-phased and stoichiometric InTe thin films were successfully prepared using vacuum evaporation technique. A systematic variation in substrate temperature and annealing temperature along with annealing duration resulted stoichiometric and single phase InTe films. The annealing treatment of as-deposited films resulted in the structural transformation from mixed phase of In2Te3 and InTe to mono-phased InTe. The electrical conductivity of stoichiometric single phase films was found to be 15.612 Omega(-1) cm(-1). The optical band gap of stoichiometric InTe films was found to be 1.42 eV and absorption coefficient of the films was of the order of 10(6) cm(-1). Electrical properties of mono-phased films accompanied with optical properties such as direct band gap and absorption coefficient makes them suitable for optoelectronic devices.
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页码：220 / 225
页数：6
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