Compensation of piezoresistivity effect in p-type implanted resistors

被引：2
|
作者：
Fruett, F [1 ]
Meijer, GCM [1 ]
机构：
[1] Delft Univ Technol, Elect Res Lab, NL-2628 CD Delft, Netherlands
来源：
ELECTRONICS LETTERS | 1999年 / 35卷 / 18期
关键词：
D O I：
10.1049/el:19991049
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
To reduce the piezoresistivity effect on integrated resistors, the use of a special layout that is based on piezoresistive theory is suggested. Experimental results for a p-type implanted resistor show that the sensitivity to mechanical stress can be reduced by a factor of 55.
引用
收藏
页码：1587 / 1588
页数：2
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