Compensation of piezoresistivity effect in p-type implanted resistors

被引：2
|
作者：
Fruett, F [1 ]
Meijer, GCM [1 ]
机构：
[1] Delft Univ Technol, Elect Res Lab, NL-2628 CD Delft, Netherlands
来源：
ELECTRONICS LETTERS | 1999年 / 35卷 / 18期
关键词：
D O I：
10.1049/el:19991049
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
To reduce the piezoresistivity effect on integrated resistors, the use of a special layout that is based on piezoresistive theory is suggested. Experimental results for a p-type implanted resistor show that the sensitivity to mechanical stress can be reduced by a factor of 55.
引用
收藏
页码：1587 / 1588
页数：2
相关论文
共 50 条
  • [1] NONLINEAR EFFECTS IN THE PIEZORESISTIVITY OF P-TYPE SILICON
    LENKKERI, JT
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1986, 136 (01): : 373 - 385
  • [2] Nonlinear Piezoresistive Effect in p-Type Silicon Planar Resistors.
    Jenschke, W.
    Feingeratetechnik Berlin, 1985, 34 (01): : 7 - 10
  • [3] Piezoresistivity of p-type heteroepitaxial diamond films on Si(100)
    Wang, WL
    Liao, KJ
    Feng, B
    Sanchez, G
    Polo, MC
    Esteve, J
    DIAMOND AND RELATED MATERIALS, 1998, 7 (2-5) : 528 - 532
  • [4] Effect of rapid thermal annealing on beryllium implanted p-type GaN
    Huang, HW
    Kao, CC
    Tsai, JY
    Yu, CC
    Chu, CF
    Lee, JY
    Kuo, SY
    Lin, CF
    Kuo, HC
    Wang, SC
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 107 (03): : 237 - 240
  • [5] A theoretical calculation of the piezoresistivity and magnetoresistivity in p-type semiconducting diamond films
    Kong, CY
    Wang, WL
    Liao, KJ
    Wang, SX
    Fang, L
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (08) : 1765 - 1774
  • [6] COMPENSATION IN DEMAGED P-TYPE PBTE
    HEWES, CR
    SENTURIA, SD
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 280 - &
  • [7] p-type doping and compensation in ZnO
    Lee, Woo-Jin
    Kang, Joongoo
    Chang, K. J.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (01) : 196 - 201
  • [8] Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC
    Weisse, J.
    Hauck, M.
    Krieger, M.
    Bauer, A. J.
    Eribacher, T.
    AIP ADVANCES, 2019, 9 (05):
  • [9] Investigation of beryllium implanted P-type GaN
    Yu, CC
    Chu, CF
    Tsai, JY
    Wang, SC
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 82 (1-3): : 82 - 84
  • [10] TEMPERATURE PARAMETERS OF P-TYPE SILICON HIGH VALUE RESISTORS
    ILIEVA, MN
    PETROVA, RS
    DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1976, 29 (02): : 179 - 182
12345