High quantum efficiency of photoluminescence in GaN and ZnO

被引：0
|
作者：
Reshchikov, M. A. [1 ]
Gu, X. [1 ]
Nemeth, B. [2 ]
Nause, J. [2 ]
Morkoç, H. [1 ]
机构：
[1] Virginia Commonwealth Univ, EE & Phys Dept, Med Coll Virginia Campus, Richmond, VA 23284 USA
[2] Cermet Inc, Atlanta, GA 30318 USA
来源：
GAN, AIN, INN AND RELATED MATERIALS | 2006年 / 892卷
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The quantum efficiency (QE) of photoluminescence (PL) has been estimated in GaN and ZnO samples. A Si-doped GaN layer grown by molecular beam epitaxy (MBE) exhibited the highest QE of about 90% at low temperatures. Recombination via the shallow donor-acceptor pair transitions dominated in this sample. In contrast, a bulk ZnO crystal with the QE of PL of about 85% contained almost no defect- or impurity-related PL signatures besides the emission attributed to free and bound excitons. The sources of radiative and nonradiative recombination in GaN and ZnO are discussed.
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页码：587 / +
页数：2
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