High quantum efficiency of photoluminescence in GaN and ZnO

被引：0

作者：

Reshchikov, M. A. ^{[1
]}

Gu, X. ^{[1
]}

Nemeth, B. ^{[2
]}

Nause, J. ^{[2
]}

Morkoç, H. ^{[1
]}

机构：

[1] Virginia Commonwealth Univ, EE & Phys Dept, Med Coll Virginia Campus, Richmond, VA 23284 USA

[2] Cermet Inc, Atlanta, GA 30318 USA

来源：

GAN, AIN, INN AND RELATED MATERIALS | 2006年 / 892卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The quantum efficiency (QE) of photoluminescence (PL) has been estimated in GaN and ZnO samples. A Si-doped GaN layer grown by molecular beam epitaxy (MBE) exhibited the highest QE of about 90% at low temperatures. Recombination via the shallow donor-acceptor pair transitions dominated in this sample. In contrast, a bulk ZnO crystal with the QE of PL of about 85% contained almost no defect- or impurity-related PL signatures besides the emission attributed to free and bound excitons. The sources of radiative and nonradiative recombination in GaN and ZnO are discussed.

引用

页码：587 / +

页数：2

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