Plasma doping and reduced crystalline damage for conformally doped fin field effect transistors

被引：27

作者：

Lee, Jae Woo ^{[1
,2
]}

Sasaki, Yuichiro ^{[1
]}

Cho, Moon Ju ^{[1
]}

Togo, Mitsuhiro ^{[1
]}

Boccardi, Guillaume ^{[1
]}

Ritzenthaler, Romain ^{[1
]}

Eneman, Geert ^{[1
]}

Chiarella, Thomas ^{[1
]}

Brus, Stephan ^{[1
]}

Horiguchi, Naoto ^{[1
]}

Groeseneken, Guido ^{[1
,2
]}

Thean, Aaron ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 22期

关键词：

The Imec Core Partners are gratefully acknowledged for their financial support of the Logic Device Program;

D O I：

10.1063/1.4809755

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low frequency noise and hot carrier reliability analysis of the plasma doping scheme are investigated for advanced fin field effect transistor (FinFET) conformal doping. Plasma doping improves device performances and hot carrier reliability for both fin resistors and FinFETs due to the absence of crystalline damage for narrow fins. One decade lower noise level and Coulomb scattering coefficient related to the crystalline damage suppression are observed for the plasma doping compared to the standard ion-implantation. (C) 2013 AIP Publishing LLC.

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页数：4

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