A Passive I/Q Millimeter-Wave Mixer and Switch in 45-nm CMOS SOI

被引:23
|
作者
Parlak, Mehmet [1 ]
Buckwalter, James F. [2 ]
机构
[1] Broadcom Corp, Irvine, CA 92617 USA
[2] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
关键词
CMOS; 45; nm; in-phase/quadrature (I/Q); passive mixer; silicon-on-insulator (SOI); single-pole double-throw (SPDT) switch; HIGH-LINEARITY; BAND;
D O I
10.1109/TMTT.2013.2238247
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents passive integrated circuits for millimeter-wave transmitters and receivers implemented in a 45-nm CMOS silicon-on-insulator (SOI) process. The advantages of SOI over bulk CMOS are discussed for millimeter-wave passive circuits. First, a single pole double throw (SPDT) switch demonstrates a measured insertion loss of less than 1.7 dB at 45 GHz and third-order intermodulation intercept point (IIP3) of 18.2 dBm. Second, a double-balanced passive in-phase/quadrature (I/Q) mixer exhibits a conversion loss of 8.35 dB at 44 GHz and IIP3 of 15.5 dBm. At a fixed IF of 200 MHz, the minimum I/Q gain and phase imbalance is 0.25 dB and 1.9 degrees. The passive mixer and SPDT switch results demonstrate a record minimum insertion loss and linearity performance for the passive millimeter-wave circuits.
引用
收藏
页码:1131 / 1139
页数:9
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