Growth of cubic GaN on (001)GaAS

被引：0
|
作者：
Brandt, O [1 ]
Yang, H [1 ]
Trampert, A [1 ]
Ploog, KH [1 ]
机构：
[1] PAUL DRUDE INST FESTKORPERELEKT,D-10117 BERLIN,GERMANY
来源：
GALLIUM NITRIDE AND RELATED MATERIALS | 1996年 / 395卷
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：27 / 37
页数：11
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