Microstructure and Electrical Properties of Ga2O3 Doping on ZnO Varistor Ceramics with Different Sintering Temperature

被引：0
|
作者：
Zhao, Hongfeng [1 ]
Hu, Jun [1 ]
Chen, Shuiming [1 ]
He, Jinliang [1 ]
机构：
[1] Tsinghua Univ, Dept Elect Engn, Beijing, Peoples R China
来源：
2016 IEEE INTERNATIONAL CONFERENCE ON DIELECTRICS (ICD), VOLS 1-2 | 2016年
关键词：
ZnO varistor; sintering temperature; ceramics; Ga2O3; electrical property;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The electrical properties of ZnO varistor ceramics prepared with different sintering temperature were researched. The grain size of samples was homogeneous at sintering temperature 1160 degrees C. The largest nonlinearity coefficient and least grain resistance were 75 and 0.3 Omega respectively, at 1160 degrees C. The leakage current was reduced with increasing sintering temperature. The voltage gradient E-1mA 410V/mm acquired was good to optimize the ultra-high voltage arrestor structure. The optimized sintering temperature is 1160 degrees C for giving ZnO varistors recipe.
引用
收藏
页码：260 / 263
页数：4
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