Simulation Experimental Study on Water Invasion Rules of Gas Reservoir With Multiwell Development

被引:1
|
作者
Fang Feifei [1 ]
Gao Shusheng [2 ]
Liu Huaxun [2 ]
机构
[1] Univ Chinese Acad Sci, Beijing, Peoples R China
[2] PetroChina Petr Explorat & Dev Res Inst, Langfang, Hebei, Peoples R China
关键词
Gas reservoir with edge and bottom water; Multiwell development; Physical simulation; Water invasion law; Recovery percent; Water invasion;
D O I
10.1145/3284557.3284728
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
Real gas reservoirs have strong heterogeneities and usually have pore (hole) and fractured zones. They are difficult to develop and the invasion of edge-and-bottom water increases the complexity of the development. In order to be able to understand the water invasion law and development effect of the gas reservoirs with edge and bottom water. Different types and different permeability cores are selected to characterize the effect of the gas reservoir under the condition of inhomogeneous and the effect of different development methods. The results show that: Both arrange wells in high and low permeability zones can obtain the higher recovery factor. During the development process, the gas production rate of the high permeability zone should be limited to avoid the rapid coning of the formation water along the high permeability zone, resulting in the premature flooding of the gas reservoir. Different development order have little difference between water influx and water production, but if first develop low-permeability zone and then product high-permeability zone, it will have higher levels of water recovery and final recovery; High permeability zone do not shut the wells after water breakthrough can effectively increase the recovery of gas reservoirs, but it faces the problem of produced water treatment. The experimental results provide a basis for understanding the influence of different factors on the water invasion regularity of multiwell development and optimizing the production of the bottom water gas reservoirs.
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页数:6
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