A setup for arc-free reactive DC sputter deposition of Al-O-N

被引：2

作者：

Fischer, Maria ^{[1
]}

Trant, Mathis ^{[1
]}

Thorwarth, Kerstin ^{[1
]}

Patscheider, Joerg ^{[1
,2
]}

Hug, Hans Josef ^{[1
,3
]}

机构：

[1] Empa, Swiss Fed Labs Mat Sci & Technol, Uberlandstr 129, CH-8600 Dubendorf, Switzerland

[2] Evatec AG, Hauptstr 1a, CH-9477 Trubbach, Switzerland

[3] Univ Basel, Dept Phys, Klingelbergstr 82, CH-4056 Basel, Switzerland

来源：

SURFACE & COATINGS TECHNOLOGY | 2019年 / 362卷

基金：

瑞士国家科学基金会;

关键词：

Reactive sputtering; Transparent hard coatings; Thin films; Aluminum oxynitride; Al-O-N; THIN-FILMS; THERMAL-CONDUCTIVITY; AL2O3; FILMS; MAGNETRON; DENSITY; VOLTAGE; STRESS;

D O I：

10.1016/j.surfcoat.2019.01.082

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Aluminum oxynitride (Al-O-N) is a material suitable for hard, transparent thin films. Its physical properties and structure can be adjusted through the O-to-N ratio. Reactive Direct Current Magnetron Sputtering (R-DCMS) is a practical, widespread technique for the deposition of coatings. However, it proves to be challenging in the case of Al-O-N. The reason for this Is the high reactivity of O-2. Poisoning of Al targets by O-2 causes formation of insulating oxide islands and consequently leads to target destruction and a failure of the deposition process. Here, we show that with two separate gas inlets for the two reactive gases, a good process stability can be achieved over the entire range of O-to-N ratios.

引用

页码：220 / 224

页数：5

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