Switching CdSe quantum dot luminescence with a-Si:H

被引：0

作者：

Di Vece, M. ^{[1
]}

van Duren, S. N. F. ^{[1
]}

van den Heuvel, D. J. ^{[1
]}

Mitoraj, D. ^{[2
]}

Kuang, Y. ^{[3
]}

Gerritsen, H. C. ^{[1
]}

Schropp, R. E. I. ^{[3
]}

机构：

[1] Univ Utrecht, Debye Inst Nanomat Sci, NL-3508 TA Utrecht, Netherlands

[2] Univ Utrecht, Debye Inst Nanomat Sci Condensed Matter & Interfa, NL-3508 TA Utrecht, Netherlands

[3] Univ Utrecht, Debye Inst Nanomat Sci, NL-5656 AE Eindhoven, Netherlands

来源：

NANOTECHNOLOGY | 2013年 / 24卷 / 31期

关键词：

PHOTOLUMINESCENCE; NANOCRYSTALS; MICROCRYSTALLINE; CELLS;

D O I：

10.1088/0957-4484/24/31/315202

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Dynamical control of the luminescence of quantum dots is highly important for technology in the field of telecommunication, displays, and photovoltaics. In this work we use an a-Si: H solar cell structure in which CdSe quantum dots are sandwiched. By applying a positive potential over the device, charge carriers generated in the quantum dots are transported to the a-Si: H layer and transformed into electrical energy, changing the luminescence intensity with a switching time lower than 60 ms. This is a promising new step towards using quantum dots in optical switching devices.

引用

页数：4

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