Langevin equations and surface growth

被引:32
|
作者
Costanza, G
机构
[1] Departamento de Física, Universidad Nacional de San Luis, San Luis, 5700
来源
PHYSICAL REVIEW E | 1997年 / 55卷 / 06期
关键词
D O I
10.1103/PhysRevE.55.6501
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
The three approaches usually used to study surface growth are (i) master equation, (ii) stochastic Langevin equation, and (iii) microscopic models. All of them give the same scaling exponents. Recently, Vvedensky et al. [Phys. Rev. E 48, 852 (1993)] derived a stochastic Langevin equation from a master equation of the birth and death type, for the epitaxial growth, demonstrating the equivalence of both approaches. In this paper a stochastic Langevin equation is derived from a discrete model. The results are the same as those obtained by Vvedensky el al. demonstrating that the three approaches are equivalent. As a nontrivial example, our procedure is used to derive the Kardar-Parisi-Zhang (KPZ) equation from the ballistic deposition process. This model with vacancies and overhangs is very difficult to handle, due to the algebraic complications that arise when the master equation approach is used.
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页码:6501 / 6506
页数:6
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