Nanoscale lateral field-emission triode operating at atmospheric pressure

A nano-triode fabricated out of doped silicon-on-insulator material is demonstrated. Low turn-on voltages and the possibility of direct integration into existing silicon technology are but two of the advantages of these new devices. It is also possible to tune the current collected at the drain electrode by biasing the gate electrodes. The Figure depicts a scanning electron micrograph of the free-standing silicon nanostructure.