Dielectric environment effect on carrier mobility of graphene double-layer structure

被引:19
|
作者
Hosono, Kazuhiro [1 ]
Wakabayashi, Katsunori [1 ]
机构
[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan
基金
日本学术振兴会;
关键词
KAPPA GATE DIELECTRICS; SYMMETRY;
D O I
10.1063/1.4813821
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have theoretically studied the dielectric environment effect on the charged-impurity-limited carrier mobility of graphene double-layer structure (GDLS) on the basis of the Boltzmann transport theory. In this system, two graphene layers are separated by a dielectric barrier layer. It is pointed out that the carrier mobility strongly depends on the dielectric constant of the barrier layer when the interlayer distance becomes larger than the inverse of the Fermi wave vector. Moreover, the conditions to improve the charged-impurity-limited carrier mobility of the GDLS are evaluated. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
引用
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页数:4
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