Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors

被引：13

作者：

Ho, Szu-Han ^{[1
]}

Chang, Ting-Chang ^{[2
]}

Wu, Chi-Wei ^{[1
]}

Lo, Wen-Hung ^{[2
]}

Chen, Ching-En ^{[1
]}

Tsai, Jyun-Yu ^{[2
]}

Liu, Guan-Ru ^{[2
]}

Chen, Hua-Mao ^{[3
,4
]}

Lu, Ying-Shin ^{[2
]}

Wang, Bin-Wei ^{[5
]}

Tseng, Tseung-Yuen ^{[1
]}

Cheng, Osbert ^{[6
]}

Huang, Cheng-Tung ^{[6
]}

Sze, Simon M. ^{[1
,2
,7
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[3] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[4] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[5] Peking Univ, Dept Elect Engn, Beijing 100871, Peoples R China

[6] United Microelect Corp, Device Dept, Tainan Sci Pk, Taiwan

[7] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 01期

关键词：

DEGRADATION; DIELECTRICS; MOSFETS; DEVICES; STRESS;

D O I：

10.1063/1.4773479

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This Letter investigates a hump in gate current after negative-bias temperature-instability (NBTI) in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors. Measuring gate current at initial through body floating and source/drain floating shows that hole current flows from source/drain. The fitting of gate current (I-g)-gate voltage (V-g) characteristic curves demonstrates that the Frenkel-Poole mechanism dominates the conduction. Next, by fitting the gate current after NBTI, in the order of Frenkel-Poole then tunneling, the Frenkel-Poole mechanism can be confirmed. These phenomena can be attributed to hole trapping in high-k bulk and the electric field formula Ehigh-k epsilon(high-k) = Q+E-sio2 epsilon(sio2). (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773479]

引用

页数：4

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