Creep behaviour of MoSi2-SiC and MoSi2-HfO2

被引：10
|
作者：
Hvizdos, P
Besterci, M
Ballokova, B
Scholl, R
Böhm, A
机构：
[1] Slovak Acad Sci, UMV SAV, Inst Mat Res, Kosice 04353, Slovakia
[2] Fraunhofer Inst Fertigungstech & Angew Mat Forsch, Dresden, Germany
来源：
MATERIALS LETTERS | 2001年 / 51卷 / 06期
关键词：
creep behaviour; molybdenum disilicide; powder metallurgy; diffusion;
D O I：
10.1016/S0167-577X(01)00340-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Creep resistance of two MoSi2-based materials containing SiC and HfO2 particles, respectively, in ambient atmosphere was studied in the temperature range 1100-1400 degreesC under a load of 100 MPa. The microstructure and its response to hi.-h-temperature load were investigated by TEM using the thin foil technique. Comparison of the creep resistance of both materials at each particular testing temperature shows that the performance of MoSi2-HfO2 is about one order of magnitude better than the other one. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：485 / 489
页数：5
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