Bimodal switching field distributions in all-perpendicular spin-valve nanopillars

被引：6
|
作者：
Gopman, D. B. [1 ]
Bedau, D. [2 ]
Mangin, S. [3 ]
Fullerton, E. E. [4 ]
Katine, J. A. [2 ]
Kent, A. D. [1 ]
机构：
[1] NYU, Dept Phys, New York, NY 10003 USA
[2] HGST San Jose Res Ctr, San Jose, CA 95135 USA
[3] Univ Lorraine, CNRS, UMR 7198, Inst Jean Lamour, Nancy, France
[4] Univ Calif San Diego, CMRR, La Jolla, CA 92093 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 17期
基金：
美国国家科学基金会;
关键词：
MAGNETIZATION REVERSAL; ANISOTROPY;
D O I：
10.1063/1.4855019
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Switching field measurements of the free layer element of 75 nm diameter spin-valve nanopillars reveal a bimodal distribution of switching fields at low temperatures (below 100 K). This result is inconsistent with a model of thermal activation over a single perpendicular anisotropy barrier. The correlation between antiparallel to parallel and parallel to antiparallel switching fields increases to nearly 50% at low temperatures. This reflects random fluctuation of the shift of the free layer hysteresis loop between two different magnitudes, which may originate from changes in the dipole field from the polarizing layer. The magnitude of the loop shift changes by 25% and is correlated to transitions of the spin-valve into an antiparallel configuration. (C) 2014 AIP Publishing LLC.
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页数：3
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