The Design and Simulation Model of an Analog Floating-Gate Computational Element for use in Large-Scale Analog Reconfigurable Systems

被引:1
|
作者
Gray, Jordan [1 ]
Robucci, Ryan [1 ]
Hasler, Paul [1 ]
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
关键词
D O I
10.1109/MWSCAS.2008.4616784
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
We present the methodology for implementing a computational memory element using a floating-gate pFET model suitable for the design and simulation of analog systems. A first-rder physically inspired model of pFET hot-election injection is implemented in Verilog-A, fit to experimental data, and then applied to a proposed floating-gate circuit. The model parameters are fit directly to the drain current data from a measured floating-ate pFET, eliminating the need for estimating or measuring gate injection current. The model is used to examine the programming transient response of a proposed analog computational vector-matrix multiplier cell. The circuit eliminates power-supply ramping by using a negative voltage, avoids complex characterization by linearized the injection current, and reduces off-chip interaction with on-chip feedback. We discuss how our model and approach represent a pathway for accessable floating-gate design, simulation, and implementation.
引用
收藏
页码:253 / 256
页数:4
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