Oxygen adsorption on Gd(0001) at 300 K leads to the formation of a well-ordered surface oxide with a characteristic occupied valence state, originating from hybridization between Gd 5d and O 2p states. This oxygen-induced state, which closely resembles the surface state of clean Gd(0001), has a binding energy of approximate to 0.8 eV at <(Gamma)over bar> and hence permits a detailed investigation by photoelectron spectroscopy. It exhibits a distinct temperature-dependent magnetic splitting, that remains finite above the Curie temperature. [S0163-1829(99)00629-3].
机构:
Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R ChinaChinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China
Xiao, WD
Guo, QL
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Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R ChinaChinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China
Guo, QL
Xue, QK
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Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R ChinaChinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China
Xue, QK
Wang, EG
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Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R ChinaChinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China
机构:
Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R ChinaSouth Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
Dong, Lei
Shi, Xingqiang
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South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R ChinaSouth Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
Shi, Xingqiang
Liu, Yang
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South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R ChinaSouth Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
Liu, Yang
Van Hove, Michel A.
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Hong Kong Baptist Univ, Inst Computat & Theoret Studies, Hong Kong, Hong Kong, Peoples R China
Hong Kong Baptist Univ, Dept Phys, Hong Kong, Hong Kong, Peoples R ChinaSouth Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
Van Hove, Michel A.
Lin, Nian
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Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R ChinaSouth Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
Lin, Nian
Tong, S. Y.
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South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
Chinese Univ Hong Kong, Sch Sci & Engn, Shenzhen 518172, Peoples R ChinaSouth Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
机构:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Park, CW
Yoon, DY
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机构:Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea