Degradation of CMOS image sensors in deep-submicron technology due to γ-irradiation

被引：50

作者：

Rao, Padmakumar R. ^{[1
]}

Wang, Xinyang ^{[1
]}

Theuwissen, Albert J. P. ^{[1
,2
]}

机构：

[1] Delft Univ Technol, Elect Instrumentat Lab, Delft, Netherlands

[2] Harvest Imaging, Bree, Belgium

来源：

SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 09期

关键词：

CMOS image sensors; gated-diodes; radiation hardness; STI; spectral response;

D O I：

10.1016/j.sse.2008.04.023

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, radiation induced damage mechanisms in deep submicron technology is resolved using finger gated-diodes (FGDs) as a radiation sensitive too]. It is found that these structures are simple yet efficient structures to resolve radiation induced damage in advanced CMOS processes. The degradation of the CMOS image sensors in deep-submicron technology due to gamma-ray irradiation is Studied by developing a model for the spectral response of the sensor and also by the dark-signal degradation as a function of STI (shallow-trench isolation) parameters. It is found that threshold shifts in the gate-oxide/silicon interface as well as minority carrier life-time variations in the silicon bulk are minimal. The top-layer material properties and the photodiode Si-SiO2 interface quality are degraded due to gamma-ray irradiation. Results further Suggest that p-well passivated structures are inevitable for radiation-hard designs. It was found that high electrical fields in submicron technologies pose a threat to high quality imaging in harsh environments. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：1407 / 1413

页数：7

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