Achieving Surface Quantum Oscillations in Topological Insulator Thin Films of Bi2Se3

被引：67

作者：

Taskin, A. A. ^{[1
]}

Sasaki, Satoshi ^{[1
]}

Segawa, Kouji ^{[1
]}

Ando, Yoichi ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 41期

基金：

日本学术振兴会;

关键词：

topological insulators; bismuth selenide; molecular beam epitaxy; weak antilocalization; surface quantum oscillations; TRANSPORT; STATES;

D O I：

10.1002/adma.201201827

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High-quality thin films of topological insulator Bi2Se3 grown on sapphire substrates present a long phase coherence length and allow direct observations of surface quantum oscillations. The key to achieving high mobility of surface electrons is to raise the main deposition temperature to 300-320 degrees C, which necessitates a two-step deposition procedure with the initial epilayer deposited at 110-130 degrees C.

引用

页码：5581 / 5585

页数：5

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