Tailoring the Switching Field Dependence on External Parameters in Magnetic Microwires

被引:8
|
作者
Varga, R. [1 ]
Gamcova, J. [1 ]
Klein, P. [1 ]
Kovac, J. [2 ]
Zhukov, A. [3 ,4 ]
机构
[1] UPJS, Inst Phys, Fac Sci, Kosice 04154, Slovakia
[2] SAS, Inst Expt Phys, Kosice, Slovakia
[3] Univ Basque Country, Fac Quim, Dept Fis Mat, E-20080 San Sebastian, Spain
[4] Basque Fdn Sci, IKERBASQUE, Bilbao 48011, Spain
关键词
Magnetic microwires; magnetoelastic anisotropy; structural relaxation; switching field; TEMPERATURE-DEPENDENCE;
D O I
10.1109/TMAG.2012.2218224
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have studied the effect of thermal treatment on the sensitivity and stability of the switching field in bistable glass-coated Fe-Ni-Si-B microwire. We have found that annealing at 300 degrees C/1 hour leads to the increase in the sensitivity of the switching field to the applied external stress. Moreover, the switching field fluctuation decreases after such treatment as a result of domain structure stabilization through the structural relaxation.
引用
收藏
页码:30 / 33
页数:4
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