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- [41] Fermi level tuning of Ag-doped Bi2Se3 topological insulatorSCIENTIFIC REPORTS, 2019, 9 (1)Uesugi, Eri论文数: 0 引用数: 0 h-index: 0机构: Okayama Univ, Res Inst Interdisciplinary Sci, Okayama 7008530, Japan Okayama Univ, Res Inst Interdisciplinary Sci, Okayama 7008530, JapanUchiyama, Takaki论文数: 0 引用数: 0 h-index: 0机构: Okayama Univ, Res Inst Interdisciplinary Sci, Okayama 7008530, Japan Okayama Univ, Res Inst Interdisciplinary Sci, Okayama 7008530, JapanGoto, Hidenori论文数: 0 引用数: 0 h-index: 0机构: Okayama Univ, Res Inst Interdisciplinary Sci, Okayama 7008530, Japan Okayama Univ, Res Inst Interdisciplinary Sci, Okayama 7008530, JapanOta, Hiromi论文数: 0 引用数: 0 h-index: 0机构: Okayama Univ, Adv Sci Res Ctr, Okayama 7008530, Japan Okayama Univ, Res Inst Interdisciplinary Sci, Okayama 7008530, JapanUeno, Teppei论文数: 0 引用数: 0 h-index: 0机构: Okayama Univ, Res Inst Interdisciplinary Sci, Okayama 7008530, Japan Okayama Univ, Res Inst Interdisciplinary Sci, Okayama 7008530, JapanFujiwara, Hirokazu论文数: 0 引用数: 0 h-index: 0机构: Okayama Univ, Res Inst Interdisciplinary Sci, Okayama 7008530, Japan Okayama Univ, Res Inst Interdisciplinary Sci, Okayama 7008530, JapanTerashima, Kensei论文数: 0 引用数: 0 h-index: 0机构: Okayama Univ, Res Inst Interdisciplinary Sci, Okayama 7008530, Japan Okayama Univ, Res Inst Interdisciplinary Sci, Okayama 7008530, JapanYokoya, Takayoshi论文数: 0 引用数: 0 h-index: 0机构: Okayama Univ, Res Inst Interdisciplinary Sci, Okayama 7008530, Japan Okayama Univ, Res Inst Interdisciplinary Sci, Okayama 7008530, Japan论文数: 引用数: h-index:机构:Akimitsu, Jun论文数: 0 引用数: 0 h-index: 0机构: Okayama Univ, Res Inst Interdisciplinary Sci, Okayama 7008530, Japan Okayama Univ, Res Inst Interdisciplinary Sci, Okayama 7008530, JapanKobayashi, Kaya论文数: 0 引用数: 0 h-index: 0机构: Okayama Univ, Res Inst Interdisciplinary Sci, Okayama 7008530, Japan Okayama Univ, Res Inst Interdisciplinary Sci, Okayama 7008530, JapanKubozono, Yoshihiro论文数: 0 引用数: 0 h-index: 0机构: Okayama Univ, Res Inst Interdisciplinary Sci, Okayama 7008530, Japan Okayama Univ, Res Inst Interdisciplinary Sci, Okayama 7008530, Japan
- [42] Fermi level tuning of Ag-doped Bi2Se3 topological insulatorScientific Reports, 9Eri Uesugi论文数: 0 引用数: 0 h-index: 0机构: Okayama University,Research Institute for Interdisciplinary ScienceTakaki Uchiyama论文数: 0 引用数: 0 h-index: 0机构: Okayama University,Research Institute for Interdisciplinary ScienceHidenori Goto论文数: 0 引用数: 0 h-index: 0机构: Okayama University,Research Institute for Interdisciplinary ScienceHiromi Ota论文数: 0 引用数: 0 h-index: 0机构: Okayama University,Research Institute for Interdisciplinary ScienceTeppei Ueno论文数: 0 引用数: 0 h-index: 0机构: Okayama University,Research Institute for Interdisciplinary ScienceHirokazu Fujiwara论文数: 0 引用数: 0 h-index: 0机构: Okayama University,Research Institute for Interdisciplinary ScienceKensei Terashima论文数: 0 引用数: 0 h-index: 0机构: Okayama University,Research Institute for Interdisciplinary ScienceTakayoshi Yokoya论文数: 0 引用数: 0 h-index: 0机构: Okayama University,Research Institute for Interdisciplinary ScienceFumihiko Matsui论文数: 0 引用数: 0 h-index: 0机构: Okayama University,Research Institute for Interdisciplinary ScienceJun Akimitsu论文数: 0 引用数: 0 h-index: 0机构: Okayama University,Research Institute for Interdisciplinary ScienceKaya Kobayashi论文数: 0 引用数: 0 h-index: 0机构: Okayama University,Research Institute for Interdisciplinary ScienceYoshihiro Kubozono论文数: 0 引用数: 0 h-index: 0机构: Okayama University,Research Institute for Interdisciplinary Science
- [43] Double Fe-impurity charge state in the topological insulator Bi2Se3APPLIED PHYSICS LETTERS, 2017, 111 (25)Stolyarov, V. S.论文数: 0 引用数: 0 h-index: 0机构: CNRS, Lab Phys & Etud Mat, ESPCI Paris, 10 Rue Vauquelin, F-75005 Paris, France UPMC Univ Paris 6, UMR 8213, 10 Rue Vauquelin, F-75005 Paris, France Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Russia Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia Moscow MV Lomonosov State Univ, Moscow 119992, Russia Natl Univ Sci & Technol MISIS, Moscow 119049, Russia KFU, Solid State Phys Dept, Kazan 420008, Russia CNRS, Lab Phys & Etud Mat, ESPCI Paris, 10 Rue Vauquelin, F-75005 Paris, FranceRemizov, S. V.论文数: 0 引用数: 0 h-index: 0机构: Dukhov Res Inst Automat VNIIA, Moscow 127055, Russia Russian Acad Sci, Kotelnikov Inst Radioengn & Elect, Moscow 125009, Russia CNRS, Lab Phys & Etud Mat, ESPCI Paris, 10 Rue Vauquelin, F-75005 Paris, FranceShapiro, D. S.论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Russia Dukhov Res Inst Automat VNIIA, Moscow 127055, Russia Russian Acad Sci, Kotelnikov Inst Radioengn & Elect, Moscow 125009, Russia CNRS, Lab Phys & Etud Mat, ESPCI Paris, 10 Rue Vauquelin, F-75005 Paris, FrancePons, S.论文数: 0 引用数: 0 h-index: 0机构: CNRS, Lab Phys & Etud Mat, ESPCI Paris, 10 Rue Vauquelin, F-75005 Paris, France UPMC Univ Paris 6, UMR 8213, 10 Rue Vauquelin, F-75005 Paris, France CNRS, Lab Phys & Etud Mat, ESPCI Paris, 10 Rue Vauquelin, F-75005 Paris, FranceVlaic, S.论文数: 0 引用数: 0 h-index: 0机构: CNRS, Lab Phys & Etud Mat, ESPCI Paris, 10 Rue Vauquelin, F-75005 Paris, France UPMC Univ Paris 6, UMR 8213, 10 Rue Vauquelin, F-75005 Paris, France CNRS, Lab Phys & Etud Mat, ESPCI Paris, 10 Rue Vauquelin, F-75005 Paris, France论文数: 引用数: h-index:机构:Baranov, D. S.论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Russia Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia UPMC Univ Paris 6, Sorbonne Univ, Inst Nanosci Paris, F-75005 Paris, France CNRS UMR 7588, F-75005 Paris, France CNRS, Lab Phys & Etud Mat, ESPCI Paris, 10 Rue Vauquelin, F-75005 Paris, FranceBrun, Ch.论文数: 0 引用数: 0 h-index: 0机构: UPMC Univ Paris 6, Sorbonne Univ, Inst Nanosci Paris, F-75005 Paris, France CNRS UMR 7588, F-75005 Paris, France CNRS, Lab Phys & Etud Mat, ESPCI Paris, 10 Rue Vauquelin, F-75005 Paris, FranceYashina, L. V.论文数: 0 引用数: 0 h-index: 0机构: Moscow MV Lomonosov State Univ, Moscow 119992, Russia CNRS, Lab Phys & Etud Mat, ESPCI Paris, 10 Rue Vauquelin, F-75005 Paris, FranceBozhko, S. I.论文数: 0 引用数: 0 h-index: 0机构: Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia CNRS, Lab Phys & Etud Mat, ESPCI Paris, 10 Rue Vauquelin, F-75005 Paris, FranceCren, T.论文数: 0 引用数: 0 h-index: 0机构: UPMC Univ Paris 6, Sorbonne Univ, Inst Nanosci Paris, F-75005 Paris, France CNRS UMR 7588, F-75005 Paris, France CNRS, Lab Phys & Etud Mat, ESPCI Paris, 10 Rue Vauquelin, F-75005 Paris, FrancePogosov, W. V.论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Russia Dukhov Res Inst Automat VNIIA, Moscow 127055, Russia Russian Acad Sci, Inst Theoret & Appl Electrodynam, Moscow 125412, Russia CNRS, Lab Phys & Etud Mat, ESPCI Paris, 10 Rue Vauquelin, F-75005 Paris, FranceRoditchev, D.论文数: 0 引用数: 0 h-index: 0机构: CNRS, Lab Phys & Etud Mat, ESPCI Paris, 10 Rue Vauquelin, F-75005 Paris, France UPMC Univ Paris 6, UMR 8213, 10 Rue Vauquelin, F-75005 Paris, France Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Russia UPMC Univ Paris 6, Sorbonne Univ, Inst Nanosci Paris, F-75005 Paris, France CNRS UMR 7588, F-75005 Paris, France CNRS, Lab Phys & Etud Mat, ESPCI Paris, 10 Rue Vauquelin, F-75005 Paris, France
- [44] Stability of the (0001) surface of the Bi2Se3 topological insulatorJETP Letters, 2011, 94 : 465 - 468O. E. Tereshchenko论文数: 0 引用数: 0 h-index: 0机构: Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian BranchK. A. Kokh论文数: 0 引用数: 0 h-index: 0机构: Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian BranchV. V. Atuchin论文数: 0 引用数: 0 h-index: 0机构: Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian BranchK. N. Romanyuk论文数: 0 引用数: 0 h-index: 0机构: Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian BranchS. V. Makarenko论文数: 0 引用数: 0 h-index: 0机构: Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian BranchV. A. Golyashov论文数: 0 引用数: 0 h-index: 0机构: Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian BranchA. S. Kozhukhov论文数: 0 引用数: 0 h-index: 0机构: Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian BranchI. P. Prosvirin论文数: 0 引用数: 0 h-index: 0机构: Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian BranchA. A. Shklyaev论文数: 0 引用数: 0 h-index: 0机构: Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Branch
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- [46] Topological Insulator Bi2Se3 Films on Silicon SubstratesJOURNAL OF ELECTRONIC MATERIALS, 2020, 49 (03) : 2191 - 2196Plachinda, Paul论文数: 0 引用数: 0 h-index: 0机构: Portland State Univ, 1719 SW 10th Ave, Portland, OR 97201 USA Portland State Univ, 1719 SW 10th Ave, Portland, OR 97201 USAHopkins, Michael论文数: 0 引用数: 0 h-index: 0机构: Portland State Univ, 1719 SW 10th Ave, Portland, OR 97201 USA Portland State Univ, 1719 SW 10th Ave, Portland, OR 97201 USARouvimov, Sergei论文数: 0 引用数: 0 h-index: 0机构: Univ Notre Dame, 275 Fitzpatrick Hall, Notre Dame, IN 46556 USA Portland State Univ, 1719 SW 10th Ave, Portland, OR 97201 USASolanki, Raj论文数: 0 引用数: 0 h-index: 0机构: Portland State Univ, 1719 SW 10th Ave, Portland, OR 97201 USA Portland State Univ, 1719 SW 10th Ave, Portland, OR 97201 USA
- [47] Quantum frequency doubling in the topological insulator Bi2Se3NATURE COMMUNICATIONS, 2021, 12 (01)He, Pan论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, SingaporeIsobe, Hiroki论文数: 0 引用数: 0 h-index: 0机构: MIT, Dept Phys, Cambridge, MA 02139 USA Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, SingaporeZhu, Dapeng论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, SingaporeHsu, Chuang-Han论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, SingaporeFu, Liang论文数: 0 引用数: 0 h-index: 0机构: MIT, Dept Phys, Cambridge, MA 02139 USA Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, SingaporeYang, Hyunsoo论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
- [48] Stability of the (0001) surface of the Bi2Se3 topological insulatorJETP LETTERS, 2011, 94 (06) : 465 - 468Tereshchenko, O. E.论文数: 0 引用数: 0 h-index: 0机构: Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia Novosibirsk State Univ, Novosibirsk 630090, Russia Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, RussiaKokh, K. A.论文数: 0 引用数: 0 h-index: 0机构: Russian Acad Sci, Siberian Branch, Joint Inst Geol Geophys & Mineral, Novosibirsk 630090, Russia Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, RussiaAtuchin, V. V.论文数: 0 引用数: 0 h-index: 0机构: Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, RussiaRomanyuk, K. N.论文数: 0 引用数: 0 h-index: 0机构: Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia Novosibirsk State Univ, Novosibirsk 630090, Russia Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, RussiaMakarenko, S. V.论文数: 0 引用数: 0 h-index: 0机构: Novosibirsk State Univ, Novosibirsk 630090, Russia Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, RussiaGolyashov, V. A.论文数: 0 引用数: 0 h-index: 0机构: Novosibirsk State Univ, Novosibirsk 630090, Russia Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, RussiaKozhukhov, A. S.论文数: 0 引用数: 0 h-index: 0机构: Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia Novosibirsk State Univ, Novosibirsk 630090, Russia Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, RussiaProsvirin, I. P.论文数: 0 引用数: 0 h-index: 0机构: Russian Acad Sci, Siberian Branch, Boreskov Inst Catalysis, Novosibirsk 630090, Russia Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, RussiaShklyaev, A. A.论文数: 0 引用数: 0 h-index: 0机构: Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia Novosibirsk State Univ, Novosibirsk 630090, Russia Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
- [49] Toward the Intrinsic Limit of the Topological Insulator Bi2Se3PHYSICAL REVIEW LETTERS, 2016, 117 (10)Dai, Jixia论文数: 0 引用数: 0 h-index: 0机构: Rutgers State Univ, Rutger Ctr Emergent Mat, Piscataway, NJ 08854 USA Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA Rutgers State Univ, Rutger Ctr Emergent Mat, Piscataway, NJ 08854 USAWest, Damien论文数: 0 引用数: 0 h-index: 0机构: Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA Rutgers State Univ, Rutger Ctr Emergent Mat, Piscataway, NJ 08854 USAWang, Xueyun论文数: 0 引用数: 0 h-index: 0机构: Rutgers State Univ, Rutger Ctr Emergent Mat, Piscataway, NJ 08854 USA Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA Rutgers State Univ, Rutger Ctr Emergent Mat, Piscataway, NJ 08854 USAWang, Yazhong论文数: 0 引用数: 0 h-index: 0机构: Rutgers State Univ, Rutger Ctr Emergent Mat, Piscataway, NJ 08854 USA Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA Rutgers State Univ, Rutger Ctr Emergent Mat, Piscataway, NJ 08854 USAKwok, Daniel论文数: 0 引用数: 0 h-index: 0机构: Rutgers State Univ, Rutger Ctr Emergent Mat, Piscataway, NJ 08854 USA Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA Rutgers State Univ, Rutger Ctr Emergent Mat, Piscataway, NJ 08854 USACheong, S. -W.论文数: 0 引用数: 0 h-index: 0机构: Rutgers State Univ, Rutger Ctr Emergent Mat, Piscataway, NJ 08854 USA Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA Rutgers State Univ, Rutger Ctr Emergent Mat, Piscataway, NJ 08854 USAZhang, S. B.论文数: 0 引用数: 0 h-index: 0机构: Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA Rutgers State Univ, Rutger Ctr Emergent Mat, Piscataway, NJ 08854 USAWu, Weida论文数: 0 引用数: 0 h-index: 0机构: Rutgers State Univ, Rutger Ctr Emergent Mat, Piscataway, NJ 08854 USA Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA Rutgers State Univ, Rutger Ctr Emergent Mat, Piscataway, NJ 08854 USA
- [50] Photoinduced terahertz dynamics in Bi2Se3 topological insulator2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC), 2017,论文数: 引用数: h-index:机构:Shalaby, M.论文数: 0 引用数: 0 h-index: 0机构: Paul Scherrer Inst, SwissFEL, CH-5232 Villigen, Switzerland Paul Scherrer Inst, SwissFEL, CH-5232 Villigen, Switzerland论文数: 引用数: h-index:机构:Hauri, C. P.论文数: 0 引用数: 0 h-index: 0机构: Paul Scherrer Inst, SwissFEL, CH-5232 Villigen, Switzerland Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland Paul Scherrer Inst, SwissFEL, CH-5232 Villigen, SwitzerlandLupi, S.论文数: 0 引用数: 0 h-index: 0机构: Ist Nazl Fis Nucl, Ple A Moro 2, I-00185 Rome, Italy Univ Roma La Sapienza, Dept Phys, Ple A Moro 2, I-00185 Rome, Italy Paul Scherrer Inst, SwissFEL, CH-5232 Villigen, Switzerland