Strong electron-electron interactions of a Tomonaga-Luttinger liquid observed in InAs quantum wires

被引：22

作者：

Sato, Yosuke ^{[1
]}

Matsuo, Sadashige ^{[1
,2
,3
]}

Hsu, Chen-Hsuan ^{[3
]}

Stano, Peter ^{[1
,3
,4
]}

Ueda, Kento ^{[1
]}

Takeshige, Yuusuke ^{[1
]}

Kamata, Hiroshi ^{[3
]}

Lee, Joon Sue ^{[5
]}

Shojaei, Borzoyeh ^{[5
,6
]}

Wickramasinghe, Kaushini ^{[7
]}

Shabani, Javad ^{[7
]}

Palmstrom, Chris ^{[5
,6
,8
]}

Tokura, Yasuhiro ^{[9
]}

Loss, Daniel ^{[3
,10
]}

Tarucha, Seigo ^{[1
,3
]}

机构：

[1] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan

[2] PRESTO, JST, 4-1-8 Honcho, Kawaguchi, Saitama 3320012, Japan

[3] RIKEN, Ctr Emergent Matter Sci, 2-1 Hirosawa, Wako, Saitama 3510198, Japan

[4] Slovak Acad Sci, Inst Phys, Bratislava 84511, Slovakia

[5] Univ Calif Santa Barbara, Calif NanoSyst Inst, Santa Barbara, CA 93106 USA

[6] Univ Calif Santa Barbara, Mat Engn, Santa Barbara, CA 93106 USA

[7] NYU, Dept Phys, Ctr Quantum Phenomena, 4 Washington Pl, New York, NY 10003 USA

[8] Univ Calif Santa Barbara, Elect & Comp Engn, Santa Barbara, CA 93106 USA

[9] Univ Tsukuba, Fac Pure & Appl Sci, Tsukuba, Ibaraki 3058571, Japan

[10] Univ Basel, Dept Phys, Klingelbergstr 82, CH-4056 Basel, Switzerland

来源：

PHYSICAL REVIEW B | 2019年 / 99卷 / 15期

基金：

日本学术振兴会; 日本科学技术振兴机构;

关键词：

SPIN-ORBIT INTERACTION; BEHAVIOR; CONDUCTANCE; TRANSPORT;

D O I：

10.1103/PhysRevB.99.155304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report strong electron-electron interactions in quantum wires etched from an InAs quantum well, a material generally expected to have strong spin-orbit interactions. We find that the current through the wires as a function of the bias voltage and temperature follows the universal scaling behavior of a Tomonaga-Luttinger liquid. Using a universal scaling formula, we extract the interaction parameter and find strong electron-electron interactions, increasing as the wires become more depleted. We establish theoretically that the spin-orbit interaction cause only minor modifications of the interaction parameter in this regime, indicating that genuinely strong electron-electron interactions are indeed achieved in the device. Our results suggest that etched InAs wires provide a platform with both strong electron-electron interactions and the strong spin-orbit interaction.

引用

页数：14

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