Design and Analysis of 10T-Boosted Radiation Hardened SRAM Cell for Aerospace Applications

The several radiations hardened based design (RHBD) had been developed to address the soft error problem. But they all consume relatively high total, static power with more area and delay. The 10T cell is designed to overcome the area and power dissipation problem. However, the 10T cell suffers from a large number of write failures under process variations of 45 nm CMOS technology, due to its high delay. Therefore, both boosted word-line and bit-line on 10T have been proposed the first time for improvement the writability of the cell. The 10T-boosted cell has no write failure problem. The result shows that the boosted 10T cell consumes 20.53%, 29.21%, 8.23%, and 14.7%, 42.7%, 85.9% less static, and total power compared to Dice (12T), We-Quatro (12T), and boosted Quatro (10T) respectively. The hold noise margin has been improved by 79.4%, 38.4%, and 38.9% compared to Dice, We-Quatro, and boosted Quatro, respectively. Also, the area overhead and soft error resilience of the 10T-boosted cell is improved compared to the other considered cells. The 1000 Monte Carlo Simulation has been performed to check the writability.