Thickness dependence of electrical and optical properties of sputtered nickel oxide films

被引:62
|
作者
Chen, HL [1 ]
Lu, YM
Hwang, WS
机构
[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan
[2] Kun Shan Univ Technol, Dept Elect Engn, Tainan 70101, Taiwan
[3] Kun Shan Univ Technol, Nano Technol Res & Dev Ctr, Tainan 70101, Taiwan
关键词
nickel oxide films; thickness; hall effects; electrical; optical;
D O I
10.1016/j.tsf.2005.07.124
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nickel oxide thin films were deposited by RF magnetron sputtering process in a pure oxygen atmosphere at RE power 200 W with substrate unheated and heated for 400 degrees C, respectively. Different sputtering time produced different thickness of films. Sheet resistance and resistivity were measured using four probe and Hall effects for analyzing electrical properties. The results show the lowest sheet resistance, which was 16.87 k Omega/square, and resistivity, which was 0.69 Omega cm, could be obtained in the condition of substrate unheated with a film of 200 cm thickness. The transmittance of films will decrease as the thickness of films increasing. Crystalline properties of NiO films were investigated as a function of film thickness using X-ray diffraction. The preferred orientation of NiO film is (111) as substrate unheated. It will become (200) when the substrate temperature is at 400 degrees C. With same film thickness, substrate unheated has larger grain size than the substrate with temperature of 400 degrees C. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:266 / 270
页数:5
相关论文
共 50 条
  • [31] Optical and electrical properties of sputtered InNO thin films
    Sparvoli, Marina
    Mansano, Ronaldo D.
    Zambom, Luis S.
    Chubaci, Jose F. D.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 6, 2012, 9 (06): : 1384 - 1387
  • [32] Electrical and optical properties in sputtered GaSe thin films
    Ohyama, M
    Fujita, Y
    SURFACE & COATINGS TECHNOLOGY, 2003, 169 : 620 - 623
  • [33] Dependence of oxygen flow on optical and electrical properties of DC-magnetron sputtered ITO films
    Bender, M
    Seelig, W
    Daube, C
    Frankenberger, H
    Ocker, B
    Stollenwerk, J
    THIN SOLID FILMS, 1998, 326 (1-2) : 72 - 77
  • [34] SPUTTERED FILMS OF NICKEL AND NICKEL-OXIDE
    MATSUEDA, H
    AVERBACH, BL
    MATERIALS SCIENCE AND ENGINEERING, 1976, 23 (2-3): : 131 - 134
  • [35] Quantum confinement effects on the optical properties of ion beam sputtered nickel oxide thin films
    Krishna, MG
    Bhattacharya, AK
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2001, 15 (02): : 191 - 200
  • [36] Effect of thickness on the optical absorption edge of sputtered vanadium oxide films
    Krishna, MG
    Bhattacharya, AK
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 49 (02): : 166 - 171
  • [37] THICKNESS DEPENDENCE OF ELECTRICAL TRANSPORT PROPERTIES OF GERMANIUM FILMS
    JOHANNESSEN, JS
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 11 (02): : 469 - +
  • [38] ELECTRICAL AND OPTICAL-PROPERTIES OF ION-BEAM SPUTTERED ZONAL FILMS AS A FUNCTION OF FILM THICKNESS
    QU, Y
    GESSERT, TA
    RAMANATHAN, K
    DHERE, RG
    NOUFI, R
    COUTTS, TJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04): : 996 - 1000
  • [39] OPTICAL AND ELECTRICAL-PROPERTIES OF RF-SPUTTERED INDIUM TIN OXIDE-FILMS
    SZCZYRBOWSKI, J
    DIETRICH, A
    HOFFMANN, H
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 78 (01): : 243 - 252
  • [40] Electrical properties of thin rf sputtered aluminum oxide films
    Voigt, M
    Sokolowski, M
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 109 (1-3): : 99 - 103