Growth instabilities of CaF2 adlayers deposited at high temperature on Si(111)

被引：7
|
作者：
Pietsch, H
Klust, A
Meier, A
Wollschlager, J
机构：
[1] Inst. für Festkörperphysik, Universität Hannover, D-30167 Hannover
来源：
SURFACE SCIENCE | 1997年 / 377卷 / 1-3期
关键词：
atomic force microscopy; calcium fluoride; insulating films; low energy electron diffraction (LEED); semiconductor-insulator interfaces; silicon; surface stress; surface structure; morphology; roughness; and topography; vicinal single crystal surfaces;
D O I：
10.1016/S0039-6028(96)01520-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The growth of ultrathin CaF2 films on Si(111) at high deposition temperature has been studied by UHV-atomic force microscopy (AFM) and by high-resolution low energy electron diffraction (SPA-LEED) during growth. The CaF2 film starts to grow in the step flow mode reproducing the Si substrate steps. The atomic force microscopy investigations show that after deposition of 2 TL CaF2 instabilities of the growing film lead to the formation of triangular islands on top of the initial CaF interlayer at these steps. These instabilities are enhanced with increasing CaF2 coverage so that the CaF2 him forms wedges with extremely large flat terraces separated by steps that are some nm high. Additionally, small three-dimensional islands nucleate at these steps acting as preferential nucleation centers.
引用
收藏
页码：909 / 913
页数：5
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