Challenges and opportunities in advanced Ge pMOSFETs

被引：78

作者：

Simoen, E. ^{[1
]}

Mitard, J. ^{[1
]}

Hellings, G. ^{[1
]}

Eneman, G. ^{[1
]}

De Jaeger, B. ^{[1
]}

Witters, L. ^{[1
]}

Vincent, B. ^{[1
]}

Loo, R. ^{[1
]}

Delabie, A. ^{[1
]}

Sioncke, S. ^{[1
]}

Caymax, M. ^{[1
]}

Claeys, C. ^{[1
,2
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] EE Dept KU Leuven, B-3001 Louvain, Belgium

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2012年 / 15卷 / 06期

关键词：

Germanium; CMOS; Surface passivation; High-k gate stack; Hole mobility; ATOMIC LAYER DEPOSITION; HIGH-K/GE PMOSFETS; HIGH-QUALITY GE; HIGH-MOBILITY; STRAINED-GE; HOLE-MOBILITY; SILICON-GERMANIUM; EPITAXIAL-GROWTH; SI WAFERS; P-MOSFETS;

D O I：

10.1016/j.mssp.2012.04.017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper aims at reviewing the state-of-the art of Ge pMOSFETs for future high-performance CMOS devices. Key in the development is the integration of a Ge channel on a silicon platform and the passivation of the interface between the high-k gate stack and the substrate. The different routes will be critically discussed in view of optimizing the on-current related to a high low-field hole mobility and reducing the off-current and the short-channel effects. Finally, an outlook on future technology developments will be formulated. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：588 / 600

页数：13

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