Transmission electron microscopy of the configuration of cracks and the defect structure near to cracks in Si

被引：1

作者：

Saka, H ^{[1
]}

Suprijadi

机构：

[1] Nagoya Univ, Dept Quantum Engn, Nagoya, Aichi 4648603, Japan

[2] Inst technol Bandung, Dept Phys, Bandung 40132, Indonesia

来源：

DEFECTS AND DIFFUSION IN SEMICONDUCTORS: AN ANNUAL RETROSPECTIVE IV | 2002年 / 200-2卷

关键词：

crack tip; dislocations; ductile-brittle transition; focussed ion beam; fracture; transmission electron Microscopy;

D O I：

10.4028/www.scientific.net/DDF.200-202.225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A focused ion beam technique was applied to preparing foil specimens for transmission electron microscopy and cracks and the defect structures near the cracks were observed. Cracks were introduced by Vickers indentation in Si at room temperature. Below ductile-brittle transition temperature (DBTT), cracks were of cleavage type and very straight, while at DBTT, cracks were zigzagged. Many small dislocation loops were observed in the wake of the crack which has propagated at DBTT A possible mechanism for the formation of such a dislocation loop was proposed.

引用

页码：225 / 246

页数：22

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