Microscopy of extreme ultraviolet lithography masks with 13.2 nm tabletop laser illumination

被引：57
|
作者：
Brizuela, F. [1 ]
Wang, Y.
Brewer, C. A.
Pedaci, F.
Chao, W.
Anderson, E. H.
Liu, Y.
Goldberg, K. A.
Naulleau, P.
Wachulak, P.
Marconi, M. C.
Attwood, D. T.
Rocca, J. J.
Menoni, C. S.
机构：
[1] Colorado State Univ, Natl Sci Fdn, Engn Res Ctr Extreme Ultraviolet Sci & Technol, Ft Collins, CO 80523 USA
来源：
OPTICS LETTERS | 2009年 / 34卷 / 03期
基金：
美国国家科学基金会;
关键词：
NICKEL-LIKE CADMIUM; INSPECTION; RESOLUTION; NANOSTRUCTURES; DEFECTS; EUV;
D O I：
10.1364/OL.34.000271
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report the demonstration of a reflection microscope that operates at 13.2 nm wavelength with a spatial resolution of 55 +/- 3 nm. The microscope uses illumination from a tabletop extreme ultraviolet laser to acquire aerial images of photolithography masks with a 20 s exposure time. The modulation transfer function of the optical system was characterized. (C) 2009 Optical Society of America
引用
收藏
页码：271 / 273
页数：3
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