Formation of III-V nitrides by molten salt electrochemical process

被引：0
|
作者：
Goto, T [1 ]
Ito, Y [1 ]
机构：
[1] Kyoto Univ, Grad Sch Energy Sci, Dept Fundamental Energy Sci, Kyoto 6068501, Japan
来源：
PROCEEDINGS OF THE 6TH INTERNATIONAL SYMPOSIUM ON MOLTEN SALT CHEMISTRY AND TECHNOLOGY | 2001年
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D O I：
暂无
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
Electrochemical formation of III-V nitrides has been investigated in LiCl-KCl-Li3N Systems at 723 K. Formation of aluminum nitride by molten salt electrochemical process has been achieved in success. When an aluminum electrode is anodically polarized in the melt, electrochemical implantation of nitrogen proceeds according to the reaction steps; N3- = N-ads + 3e(-) N + Al = AlN Anodically produced nitrogen atoms react with the outermost surface of electrode and diffuse into bulk of aluminum electrode to form aluminum nitride thin film. The main phase of obtained nitride layer was found to be an AlN from XPS analysis.
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页码：126 / 129
页数：4
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