RRAM-Based TCAMs for Pattern Search

Content Addressable Memory (CAM) is beneficial to applications that require high-speed pattern searching as it provides fast associative lookup operations. As the amount of data to search continues to grow, reducing power consumption while minimizing the costs for speed and area is the main thread of research in designing large capacity CAMs. In this work, we are presenting an active memory architecture incorporating a searchable resistive memory. The proposed architecture incorporates processing logic in close proximity to the RRAM and the RRAM-based TCAM, where the unit TCAM cell is comprised of five transistors and two memristors. Analyzed and simulated performance (e.g., latency, energy consumption, and storage density) of the RRAM-based TCAM at various technology nodes are presented and compared to those of prior CAM/TCAM designs.