Gallium nitride based micro-cavity light emitting diodes emitting at 498 nm

被引：2
|
作者：
Pattison, PM [1 ]
Sharma, R [1 ]
David, A [1 ]
Waki, I [1 ]
Weisbuch, C [1 ]
Nakamura, S [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2006年 / 203卷 / 07期
关键词：
D O I：
10.1002/pssa.200565408
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A gallium nitride based micro-cavity light emitting diode emitting at a peak wavelength of 498 nm has been fabricated. The epitaxial structure was grown by metalorganic chemical vapor deposition, and the device was fabricated using a laser lift-off process. Cavity thinning was carried out using reactive ion etching until a cavity length of roughly 830 nm (corresponding to a cavity order of similar to 8 for lambda = 498 mn in GaN) was achieved. Electroluminescence measurements of the micro-cavity device show a narrowed spectral width compared to the un-thinned device, and angularly resolved spectral measurements yielded a spectral shift, evincive of micro-cavity effects. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1783 / 1786
页数：4
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