Gallium nitride based micro-cavity light emitting diodes emitting at 498 nm

A gallium nitride based micro-cavity light emitting diode emitting at a peak wavelength of 498 nm has been fabricated. The epitaxial structure was grown by metalorganic chemical vapor deposition, and the device was fabricated using a laser lift-off process. Cavity thinning was carried out using reactive ion etching until a cavity length of roughly 830 nm (corresponding to a cavity order of similar to 8 for lambda = 498 mn in GaN) was achieved. Electroluminescence measurements of the micro-cavity device show a narrowed spectral width compared to the un-thinned device, and angularly resolved spectral measurements yielded a spectral shift, evincive of micro-cavity effects. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.