Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions (vol 118, 033101, 2015)

被引：0
|
作者：
Zhang, Feng [1 ,2 ]
Ikeda, Masao [1 ,2 ]
Zhou, Kun [1 ,2 ,3 ]
Liu, Zongshun [3 ]
Liu, Jianping [1 ,2 ]
Zhang, Shuming [1 ,2 ]
Yang, Hui [1 ,2 ,3 ]
机构：
[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2015年 / 118卷 / 08期
关键词：
D O I：
10.1063/1.4929635
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页数：1
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