Analytical modeling simulation and characterization of short channel Junctionless Accumulation Mode Surrounding Gate (JLAMSG) MOSFET for improved analog/RF performance

被引：14
|
作者：
Trivedi, Nitin [1 ]
Kumar, Manoj [1 ]
Haldar, Subhasis [2 ]
Deswal, S. S. [3 ]
Gupta, Mridula [1 ]
Gupta, R. S. [4 ]
机构：
[1] Univ Delhi, Dept Elect Sci, Semicond Device Res Lab, South Campus, New Delhi 110021, India
[2] Univ Delhi, Motilal Nehru Coll, Dept Phys, New Delhi 110021, India
[3] Maharaja Agrasen Inst Technol, Dept Elect & Elect Engn, New Delhi 110086, India
[4] Maharaja Agrasen Inst Technol, Dept Elect & Commun Engn, New Delhi 110086, India
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 100卷
关键词：
Accumulation mode MOSFET; Analytical model; Junctionless; Superposition techniques; Surrounding gate; GAA MOSFET; TRANSISTORS; IMPACT;
D O I：
10.1016/j.spmi.2016.11.009
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
An analytical model for Junctionless Accumulation Mode Surrounding Gate (JLAMSG) MOSFET is developed using superposition technique. The model incorporates source/drain and channel depletion for an accurate analysis. The device parameter dependent electrostatic center potential, drain current (IDs) and subthreshold slope (SS) have been evaluated. The numerical simulation results using ATLAS-3D device simulator are in good agreement with the results obtained from the developed analytical model. A comparative assessment between Junctionless (JL) and Junctionless Accumulation Mode ULAM) Surrounding Gate (SG) devices for analog/RF performance is also carried out. The superiority of JLAMSG MOSFET over Junctionless Surrounding Gate (JLSG) is discussed for Analog and RF application. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1263 / 1275
页数：13
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