Origin of Open-Circuit Voltage Turnover in Organic Solar Cells at Low Temperature

被引:8
|
作者
Tang, Yahui [1 ]
Bjuggren, Jonas M. [2 ]
Fei, Zhuping [3 ,4 ]
Andersson, Mats R. [2 ]
Heeney, Martin [3 ,4 ]
McNeill, Christopher Robert [1 ]
机构
[1] Monash Univ, Dept Mat Sci & Engn, Clayton, Vic 3800, Australia
[2] Flinders Univ S Australia, Flinders Inst Nanoscale Sci & Technol, Adelaide, SA 5042, Australia
[3] Imperial Coll London, Dept Chem, London SW7 2AZ, England
[4] Imperial Coll London, Ctr Plast Elect, London SW7 2AZ, England
来源
SOLAR RRL | 2020年 / 4卷 / 11期
关键词
leakage current; low-temperature measurements; open-circuit voltage; organic solar cells; ACCEPTORS;
D O I
10.1002/solr.202000375
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
While the efficiency of organic solar cells (OSCs) has increased considerably in recent years, there remains a significant gap between the experimental open-circuit voltage (V-OC) and the theoretical limit. Understanding the origin of this energy loss is important for the future development of OSCs, with temperature-dependent measurement ofV(OC)an important approach to help unlock the underlying physics. Interestingly, previous studies have observed a reduction inV(OC)at low temperature that has been attributed by different studies to different phenomena. To resolve this issue, herein the temperature dependence of V-OC of various polymer-based OSC systems covering a range of acceptor types (fullerene, polymer, and non-fullerene small molecule) as well as device architectures (conventional, inverted, blend and bilayer) is studied. Across all systems studied,V-OC reduction at low temperatures is associated with high parasitic leakage current, providing a universal explanation for this phenomenon in OSCs. Moreover, it is shown that leakage current, which causes complexity in the analysis and raises reliability concerns in potential applications, can be suppressed by varying device architecture, providing an effective approach for analyzing the true temperature dependence of V-OC.
引用
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页数:9
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