Thermoelectric properties of Bi-doped Mg2Si1-x Sn x prepared by mechanical alloying

被引：6

作者：

You, Sin-Wook ^{[1
]}

Kim, Il-Ho ^{[1
]}

Choi, Soon-Mok ^{[2
]}

Seo, Won-Seon ^{[3
]}

机构：

[1] Korea Natl Univ Transportat, Dept Mat Sci & Engn, Chungju 380702, South Korea

[2] Korea Univ Technol & Educ, Sch Energy Mat & Chem Engn, Cheonan 330708, Chungnam, South Korea

[3] Korea Inst Ceram Engn & Technol, Energy & Environm Mat Div, Seoul 153801, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2013年 / 63卷 / 11期

关键词：

Thermoelectric; Mg-2(Si; Sn); Solid solution; Mechanical alloying;

D O I：

10.3938/jkps.63.2153

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Bi-doped Mg2Si1-x Sn (x) solid solutions were prepared by mechanical alloying and hot pressing. The lattice constant increased and the electrical conduction behavior changed from n-type to p-type with increasing Sn content. The electrical conductivity increased with increasing Sn content at a specific temperature. Bi-doped Mg2Si1-x Sn (x) solid solutions showed n-type conduction, and the carrier concentration was increased because of doped Bi acting as donors. The absolute value of the Seebeck coefficient decreased with increasing temperature. The lowest thermal conductivity of 1.3-1.5 W/mK was obtained by Bi doping. Mg2Si0.7Sn0.3:Bi-0.01 exhibited a maximum figure of merit (ZT) of 0.65 at 823 K.

引用

页码：2153 / 2157

页数：5

共 50 条

[21] Synthesis and Characterization of Bi-doped Mg2Si Thermoelectric Materials
Fiameni, S.
Boldrini, S.
Battiston, S.
Agresti, F.
Famengo, A.
Barison, S.
Fabrizio, M.
[J]. 9TH EUROPEAN CONFERENCE ON THERMOELECTRICS (ECT2011), 2012, 1449 : 191 - 194
[22] Solid-state synthesis and thermoelectric properties of Bi-doped Mg2Si compounds
You, Sin-Wook
Kim, Il-Ho
[J]. CURRENT APPLIED PHYSICS, 2011, 11 (03) : S392 - S395
[23] Effect of nanocomposite structure on the thermoelectric properties of 0.7-at% Bi-doped Mg2 Si nanocomposite
杨梅君
沈强
张联盟
[J]. Chinese Physics B, 2011, 20 (10) : 355 - 361
[24] Effect of nanocomposite structure on the thermoelectric properties of 0.7-at% Bi-doped Mg2Si nanocomposite
Yang Mei-Jun
Shen Qiang
Zhang Lian-Meng
[J]. CHINESE PHYSICS B, 2011, 20 (10)
[25] Thermoelectric Properties of Mg2Si1-x-yGexSby Prepared by Spark Plasma Sintering
Miharu Iida
Tomoyuki Nakamura
Kenjiro Fujimoto
Yuki Yamaguchi
Ryuji Tamura
Tsutomu Iida
Keishi Nishio
[J]. MRS Advances, 2016, 1 (60) : 3971 - 3976
[26] Thermoelectric Properties of Mg2Si1-x-yGexSby Prepared by Spark Plasma Sintering
Iida, Miharu
Nakamura, Tomoyuki
Fujimoto, Kenjiro
Yamaguchi, Yuki
Tamura, Ryuji
Iida, Tsutomu
Nishio, Keishi
[J]. MRS ADVANCES, 2016, 1 (60): : 3971 - 3976
[27] Electrical and thermoelectric properties of nanocrystal substitutional semiconductor alloys Mg3(BixSb1-x)2 prepared by mechanical alloying
Xin, H. X.
Qin, X. Y.
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 39 (24) : 5331 - 5337
[28] First Principle Study on Mg2X (X = Si, Ge, Sn) Intermetallics by Bi Micro-Alloying
Bai, Guoning
Tian, Jinzhong
Guo, Qingwei
Li, Zhiqiang
Zhao, Yuhong
[J]. CRYSTALS, 2021, 11 (02): : 1 - 10
[29] Microstructure investigations of Yb- and Bi-doped Mg2Si prepared from metal hydrides for thermoelectric applications
Janka, Oliver
Zaikina, Julia V.
Bux, Sabah K.
Tabatabaifar, Hosna
Yang, Hao
Browning, Nigel D.
Kauzlarich, Susan M.
[J]. JOURNAL OF SOLID STATE CHEMISTRY, 2017, 245 : 152 - 159
[30] Mg-Vacancy-Induced Semiconducting Properties in Mg2Si1-x Sb x from Electronic Structure Calculations
Tobola, Janusz
Kaprzyk, Stanislaw
Scherrer, Hubert
[J]. JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (09) : 2064 - 2069

← 1 2 3 4 5 →